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APT56M50B2 APT56M50L
500V, 56A, 0.10 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-MaxTM
TO-264
APT56M50B2 Single die MOSFET
APT56M50L
D
G S
FEATURES
* Fast switching with low EMI/RFI * Low RDS(on) * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* PFC and other boost converter * Buck converter * Two switch forward (asymmetrical bridge) * Single switch forward * Flyback * Inverters
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 56 35 175 30 1200 28
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 12 1.4 -55 0.11 150 300 Min Typ Max 780 0.16 Unit W C/W
C
8-2006 050-8073 Rev A
oz g in*lbf N*m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 28A VGS = VDS, ID = 2.5mA VDS = 500V VGS = 0V TJ = 25C TJ = 125C
APT56M50B2_L
Typ 0.60 0.085 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 500
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.10 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 28A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
Min
Typ 42 8800 120 945 550 275 220 50 100 38 45 100 33
Max
Unit S
VGS = 0V, VDS = 0V to 333V
Co(er) = -2.04E-7
2 VDS
pF
5
+
4.76E-8 VDS
+ 1.36E-10
VGS = 0 to 10V, ID = 28A, VDS = 250V Resistive Switching VDD = 333V, ID = 28A RG = 4.7 6 , VGG = 15V
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 100
Unit A
G S
200 1 660 13.2 8 V ns C V/ns
ISD = 28A, TJ = 25C, VGS = 0V ISD = 28A 3 diSD/dt = 100A/s, TJ = 25C ISD 28A, di/dt 1000A/s, VDD = 333V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 3.06mH, RG = 4.7, IAS = 28A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of VDSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of VDSS. The equation in the test conditions box can be used to calculate Co(er) for any value of VDS less than VDSS. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8073
Rev A
8-2006
200
V
GS
= 10V
100
TJ = -55C
APT56M50B2_L
T = 125C
J
90 80 ID, DRIAN CURRENT (A) 70 60 50 40 30 20 10 0 0
160 ID, DRAIN CURRENT (A)
V
GS
= 7,8 & 10V
6V
120
TJ = 25C
80
40
TJ = 125C
TJ = 150C
5V
4.5V
0
25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 28A
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.5
175 150 ID, DRAIN CURRENT (A) 125 100 75 50 25 0 0
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C TJ = 25C TJ = 125C
1.0
0.5
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 70 60
TJ = -55C
10 8 6 4 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
Ciss
20,000 10,000
gfs, TRANSCONDUCTANCE
50 40 30 20 10 0 0
TJ = 125C
C, CAPACITANCE (pF)
TJ = 25C
1000
Coss
100 Crss 10
40 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
ID = 28A
50
500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 175 ISD, REVERSE DRAIN CURRENT (A) 150 125 100
TJ = 25C
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
VDS = 100V
VDS = 250V
75 50 25 0 0 8-2006 050-8073 Rev A
TJ = 150C
VDS = 400V
50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.0 1.2 1.4 0.6 0.8 0.2 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
250 100
I
DM
250 100 ID, DRAIN CURRENT (A)
I
APT56M50B2_L
DM
ID, DRAIN CURRENT (A)
10
13s
100s 1ms
Rds(on)
13s
10
Rds(on)
100s
1ms
10ms
100ms DC line
10ms
100ms DC line
1
TJ = 125C TC = 75C
1
TJ = 150C TC = 25C
0.1
1
600 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
600 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.0337 Dissipated Power (Watts) 0.000713 0.0189 0.527 0.0687
TC (C)
0.0575 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.18 ZJC, THERMAL IMPEDANCE (C/W) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 10-4
0.3 0.1 0.05 SINGLE PULSE D = 0.9 0.7 0.5
ZEXT
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1.0
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
e3 100% Sn Plated
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
8-2006
0.40 (.016) 0.79 (.031)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
Rev A
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
050-8073
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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